elektronische bauelemente SGM2305A -3.2 a, -30 v, r ds(on) 80 m p-channel enhancement mode power mosfet 01-june-2008 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of ?-c? specifies halogen & lead-free features the SGM2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. the SGM2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. simple drive requirement surface mount device package information weight: 0.0508 g (approximately) marking absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v continuous drain current 3 i d @ t a = 25 c -3.2 a continuous drain current 3 i d @ t a = 70 c -2.6 a pulsed drain current 1,2 i dm -10 a total power dissipation p d @ t a = 25 c 1.5 w linear derating factor 0.012 w / c operating junction & storage temperature t j , t stg -55~150 c thermal data parameter symbol value unit thermal resistance junction-ambient 3 max. r ja 83.3 c / w sot-89 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 2305a ? ? ? ? ? = date code 1 g 3 s d 2 4
elektronische bauelemente SGM2305A -3.2 a, -30 v, r ds(on) 80 m p-channel enhancement mode power mosfet 01-june-2008 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min typ max unit test conditions drain-source breakdown voltage bv dss -30 - - v v gs = 0, i d = -250 ua breakdown voltage temperature coefficient bv dss / t j - -0.1 - v / c reference to 25c, i d = -1 ma gate threshold voltage v gs(th) -0.5 - -1.2 v v ds =v gs , i d = -250 ua forward trans-conductance g fs - 9 - s v ds = -5v, i d = -3a gate-source leakage current i gss - - 100 na v gs = 12v drain-source leakage current (t j =25 ) - - -1 v ds = -30 v, v gs = 0 drain-source leakage current (t j =70 ) i dss - - -25 ua v ds = -24 v, v gs = 0 - - 65 v gs =-10v, i d =-3.2a - - 80 v gs =-4.5v, i d =-3.0a - - 150 v gs =-2.5v, i d =-2.0a static drain-source on-resistance r ds(on) - - 250 m ? v gs =-1.8v, i d =-1.0a total gate charge 2 q g - 10 18 gate-source charge q gs - 1.8 - gate-drain (?miller?) charge q gd - 3.6 - nc i d = -3.2 a v ds = -24 v v gs = -4.5 v turn-on delay time 2 t d(on) - 7 - rise time t r - 15 - turn-off delay time t d(off) - 21 - fall time t f - 15 - ns v ds = -15 v i d = -3.2 a v gs = -10 v r g = 3.3 r d = 4.6 input capacitance c iss - 735 1325 output capacitance c oss - 100 - reverse transfer capacitance c rss - 80 - pf v gs = 0 v v ds = -25 v f = 1.0 mhz source-drain diode parameter symbol min typ max unit test conditions forward on voltage 2 v sd - - -1.2 v i s =-1.2a, v gs =0v reverse recovery time 2 t rr - 24 - ns i s =-3.2a, v gs =0v reverse recovery charge q rr - 19 - nc dl/dt = 100 a / us notes: 1. pulse width limited by safe operating area. 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on fr4 board, t Q 10sec.
elektronische bauelemente SGM2305A -3.2 a, -30 v, r ds(on) 80 m p-channel enhancement mode power mosfet 01-june-2008 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SGM2305A -3.2 a, -30 v, r ds(on) 80 m p-channel enhancement mode power mosfet 01-june-2008 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (cont?d) f=1.0mhz
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